The whole thing comprises 41 layers of metals, organic materials, and semiconductors; that's more layers than you'd find in ...
School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China ...
Abstract: This work introduces a device-circuit co-design strategy that can leverages non-ideal effects, including parasitic effects, to benefit integrated circuits (ICs), thereby substantially ...
Abstract: A GaN gate injection transistor (GIT) has great potential as a power semiconductor device. However, a GaN GIT has a diode characteristic at the gate-source, and a corresponding gate drive ...