The semiconductor industry has a well-established history of “smaller, faster, and cheaper.” Improving performance and reducing device cost while shrinking packaging size is fundamental to virtually ...
Cree, Inc. announces availability of its Silicon Carbide (SiC) power products, world-class 600V SiC Junction Barrier Schottky (JBS) diodes. The new Z-Rec(TM) diodes provide improved device power ...
Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...
Reliability, efficiency, and system cost are the three key elements in solar inverter design. Vast efforts are being devoted to enhance the performance of solar inverters and so reduce the price per ...